Gallium nitride (GaN) is a kind of semiconductor with large band gap width, which belongs to the list of wide band gap semiconductors.

Gallium nitride is an excellent material for microwave power transistors,as well as a new semiconductor material for the development of microelectronic devices and photoelectronic devices.It has wide direct band gap,strong atomic bond,high thermal conductivity,good chemical stability(almost not corroded by any acid) and strong resistance to irradiation,high temperature and high pressure.